Title :
IIP3 Enhancement of Subthreshold Active Mixers
Author :
Chun-Hsiang Chang ; Onabajo, Marvin
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
This brief presents a modified subthreshold Gilbert mixer that includes an inductor between the drain of the radio frequency (RF) transistor and the sources of the LO transistors, an inductive source degeneration for the RF transistor, and a cross-coupling capacitor between the source of the RF transistor and the drain of the RF transistor in the other mixer branch to improve third-order distortion characteristics. This linearization technique enables a third-order intermodulation intercept point (IIP3) improvement of at least 10 dB compared to other subthreshold mixers. A 2.4-GHz mixer was designed and simulated using 0.11- μm CMOS technology. In the typical corner case of the postlayout simulations, the linearized mixer achieves 6.7-dBm IIP3, 8.6-dB voltage gain, and 19.2-dB single-sideband noise figure with a low power consumption of 0.423 mW.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF mixers; intermodulation distortion; linearisation techniques; low-power electronics; CMOS technology; IIP3 enhancement; LO transistors; RF tranasistor; cross-coupling capacitor; frequency 2.4 GHz; gain 8.6 dB; inductive source degeneration; inductor; linearization technique; linearized mixer; low power consumption; modified subthreshold Gilbert mixer; noise figure 19.2 dB; postlayout simulations; power 0.423 mW; radiofrequency transistor; single-sideband noise figure; size 0.11 mum; subthreshold active mixers; third-order distortion characteristics; third-order intermodulation intercept point; CMOS integrated circuits; Capacitance; Gain; Logic gates; Mixers; Radio frequency; Transistors; Linearization technique; RF front-end; low-power radio frequency (RF) design; mixer; subthreshold biasing; third-order intermodulation intercept point (IIP3) enhancement;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2013.2278115