DocumentCode :
969512
Title :
Heteroepitaxial YBa2Cu3O7-x-PrBa2Cu3O7-x-YBa2Cu3O7-x weak links grown by laser deposition
Author :
Rogers, C.T. ; Inam, A. ; Hegde, M.S. ; Venkatesan, T. ; Wu, X.D. ; Dutta, B.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
36
Issue :
11
fYear :
1989
fDate :
11/1/1989 12:00:00 AM
Firstpage :
2631
Abstract :
Summary form only given. The authors have developed a controllable HTSC (high-temperature superconductor) weak-link fabrication process for producing weak links from the high-temperature superconductor YBa2Cu3O7-x (YBCO), using PrBa2Cu3O7-x (PBCO) as a lattice-matched semiconducting barrier layer. The devices obtained show current-voltage characteristics similar to those observed for low-temperature superconductor/normal-metal/superconductor (SNS) devices. The authors found good scaling of the critical currents Ic with area, A, and scaling of the resistances Rj with 1/A; the typical values of the IcRj product of 3.5 mV are consistent with traditional SNS behavior. The authors observed Shapiro steps in response to 100-GHz millimeter-wave radiation and oscillation of the DC supercurrent in a transverse magnetic field, thus demonstrating that both the AC and DC Josephson effects occur in these devices.
Keywords :
Josephson effect; barium compounds; high-temperature superconductors; laser beam applications; praseodymium compounds; semiconductor epitaxial layers; superconducting epitaxial layers; superconducting junction devices; yttrium compounds; 100 GHz; AC Josephson effect; DC Josephson effects; DC supercurrent; SNS devices; Shapiro steps; YBa2Cu3O7-x-PrBa2Cu3O7-x-YBa2Cu3O7-x weak links; controllable HTSC; critical currents; current-voltage characteristics; heteroepitaxy; high temperature superconductors; laser deposition; lattice-matched semiconducting barrier layer; millimeter-wave radiation; resistances; scaling; superconductor/normal-metal/superconductor; transverse magnetic field; weak-link fabrication process; Bipolar transistors; Boron; Conductors; Critical current; Current-voltage characteristics; Degradation; Electron devices; Fabrication; High temperature superconductors; Implants; Josephson effect; Leakage current; Semiconductivity; Superconducting devices; Superconducting epitaxial layers; Tunneling; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.43787
Filename :
43787
Link To Document :
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