Title :
Noise correlation in dual-collector magnetotransistors
Author :
Nathan, Arokia ; Baltes, Henry P. ; Briglio, Davide R. ; Doan, My T.
Author_Institution :
LSI Logic Corp., Santa Clara, CA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
Experimental results of low frequency (1/f) noise in magnetic-field-sensitive dual-collector bipolar transistors are presented that show a strong positive correlation between the noise voltages (converted from corresponding fluctuations in the currents) of the collectors. Hence, operating the magnetotransistor in a differential mode yields very favorable signal-to-noise ratios, even for low magnetic sensitivity. Calculations performed for a magnetotransistor with a sensitivity of only 0.06/T yields a field resolution of 25 nT/√Hz at 1 kHz, in contrast to 14 μT/√Hz in single-ended operation
Keywords :
bipolar transistors; electric sensing devices; electron device noise; magnetometers; random noise; semiconductor device models; semiconductor technology; 1 kHz; 1/f noise; SNR; differential mode; dual-collector bipolar transistors; dual-collector magnetotransistors; field resolution; low frequency noise; magnetic field sensitive transistors; magnetic sensitivity; models; noise correlation; noise voltages; sensitivity; signal-to-noise ratios; Bipolar transistors; CMOS technology; Fluctuations; Frequency conversion; Low-frequency noise; Magnetic field measurement; Magnetic noise; Noise reduction; Signal to noise ratio; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
