Title :
Alloy scattering effects and calculated mobility in n-type Ga0.47In0.53As
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
The electron Hall mobility has been calculated in the relaxation time approximation as a function of carrier concentration in n-type Ga0.47In0.53As. Comparison with measured mobilities shows excellent agreement at room temperature, but significant disagreement at 77 K. It is argued that the discrepancy between calculation and experiment is the manifestation of an alloy scattering effect with a temperature variation quite different from the T¿¿ dependence derived by Brooks.
Keywords :
Hall effect; III-V semiconductors; carrier mobility; carrier relaxation time; gallium arsenide; impurity scattering; indium compounds; 77K; III-V semiconductors; alloy scattering effect; carrier concentration; electron Hall mobility; n-Ga0.47In0.53As; relaxation time approximation; room temperature; semiconductor alloys;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810119
