DocumentCode
969593
Title
Fast response InP/InGaAsP heterojunction phototransistors
Author
Fritzsche, Daniel ; Kuphal, E. ; Aulbach, R.
Author_Institution
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Volume
17
Issue
5
fYear
1981
Firstpage
178
Lastpage
180
Abstract
InP/InGaAsP heterojunction phototransistors with a base terminal have been fabricated, showing hFE, values of up to 2000. These devices allow us to trade gain for speed by charge extraction from the base. At a voltage gain of 8 to 9 a response time of 2 ns is observed.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; p-n heterojunctions; phototransistors; III-V semiconductors; InP/InGaAsP heterojunction phototransistors; charge extraction; voltage gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810126
Filename
4245590
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