DocumentCode
969659
Title
Chromium contamination in VPE InP from photoconductivity spectra
Author
Fung, S. ; Nicholas, R.J. ; Davison, A.M. ; Stradling, R.A.
Author_Institution
University of Oxford, Clarendon Laboratory, Oxford, UK
Volume
17
Issue
5
fYear
1981
Firstpage
188
Lastpage
190
Abstract
A photoconductivity study has been made of nominally undoped VPE n-InP materials grown on semi-insulating InP:Fe substrates. The photoresponse spectra obtained indicate features characteristic of Cr deep acceptors. By comparing the magnitudes of the photoresponse with that of a back-doped InP:Cr reference sample, the concentration has been estimated at between 2 and 8×1014 cm¿3.
Keywords
III-V semiconductors; chromium; indium compounds; photoconductivity; semiconductor doping; vapour phase epitaxial growth; Cr doping; III-V semiconductor; InP:Fe substrates; VPE n-InP materials; photoconductivity spectra;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810133
Filename
4245597
Link To Document