Title :
4×4 OEIC switch module using GaAs substrate
Author :
Iwama, T. ; Horimatsu, T. ; Oikawa, Yoichi ; Yamaguchi, K. ; Sasaki, M. ; Touge, T. ; Makiuchi, M. ; Hamaguchi, H. ; Wada, O.
Author_Institution :
Optoelectron. Syst. Lab., Fujitsu Labs. Ltd., Kawasaki, Japan
fDate :
6/1/1988 12:00:00 AM
Abstract :
A compact 4×4 optical switch module consisting of a monolithic 4-channel OEIC receiver chip, a 4×4 GaAs IC chip, and a 4-channel OEIC transmitter chip has been developed for the first time. The module offers good performance, without an optical loss, a bandwidth of more than 600 MHz, and a crosstalk between neighboring channels of less than -20 dB. It has a good switching and distributive performance for high speed optical input signals of 560 Mbit/s. The switch module is attractive for use in high data-rate optical communication systems, particularly in local area networks, CATV systems, and intra-office links
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; optical communication equipment; switches; 20 dB; 560 Mbit/s; 600 MHz; CATV systems; GaAs substrate; III-V semiconductors; bandwidth; compact 4×4 optical switch module; crosstalk; high data-rate optical communication systems; high speed optical input signals; intra-office links; local area networks; transmitter chip; Communication switching; Gallium arsenide; High speed optical techniques; Monolithic integrated circuits; Optical crosstalk; Optical receivers; Optical switches; Optical transmitters; Optoelectronic devices; Photonic integrated circuits;
Journal_Title :
Lightwave Technology, Journal of
