MODFET 2-D hydrodynamic energy modeling: optimization of subquarter-micron-gate structures

Using a two-dimensional hydrodynamic energy model incorporating nonstationary electron dynamics and nonisothermal electron transport (which characterizes submicron-gate MODFETs), the main physical phenomena that govern the device performance at 300 K are highlighted. This covers velocity overshoot effects, stationary-domain formation, and real space transfer. The model is then used systematically to predict the precise values of the small-signal parameters for different bias conditions. The potential performance improvement achieved by reducing the gate length below 0.2 μm is investigated. It is shown that improvement in transconductance is achieved through gate-length reduction if a severe restriction on the aspect ratio is respected