DocumentCode
969817
Title
DC theoretical sensitivity of the silicon heterostructure switch to parameter fluctuations
Author
Chol, Ajuoi M. ; Green, Roger J.
Author_Institution
Dept. of Electr. Eng., Bradford Univ., UK
Volume
37
Issue
1
fYear
1990
fDate
1/1/1990 12:00:00 AM
Firstpage
36
Lastpage
45
Abstract
Theory has been previously presented for the silicon heterostructure switch (see R.J. Green et al., ibid., vol.35, no.7, p.1035-44, 1988). However, a theoretical analysis of the sensitivity of the device to parameter fluctuations was not undertaken. In the present work, the extent to which the performance of the device is affected by fundamental parameter values is considered when under DC excitation
Keywords
elemental semiconductors; semiconductor switches; sensitivity; silicon; Al-Si; DC excitation; DC theoretical sensitivity; fundamental parameter values; parameter fluctuations; silicon heterostructure switch; Current density; Fluctuations; Optical films; Optical sensors; P-n junctions; Silicon; Spontaneous emission; Substrates; Switches; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.43798
Filename
43798
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