An analytic model for thin SOI transistors

Author

Mckitterick, John B. ; Caviglia, Anthony L.

Author_Institution

Allied-Signal Aerosp. Technol., Columbia, MD, USA

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1133

Lastpage

1138

Abstract

A simple charge sheet model is shown to provide a surprisingly accurate approximation to the behavior of a long-channel FET fabricated in a silicon-on-insulator (SOI) structure with a very thin silicon film. Using this charge sheet model, an accurate calculation of the I-V characteristics of transistors fabricated in these thin films is derived. Included in the results is an expression for the threshold voltage which shows, among other things, that the threshold voltage of suitably designed transistors is only logarithmically dependent on the thickness of the silicon film

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; I-V characteristics; SOI MOSFETs; Si on insulator; analytic model; charge sheet model; long-channel FET; thin SOI transistors; thin Si films; threshold voltage; Charge carrier processes; Dielectric devices; Dielectric thin films; FETs; Optical films; Semiconductor films; Silicon on insulator technology; Thin film transistors; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24358

Filename

24358