Substrate bias dependence of short-channel MOSFET threshold voltage-a novel approach

Author

Roychaudhuri, A. ; Jha, M. ; Sharma, S.K. ; Govindacharyulu, P.A. ; Zarabi, M.J.

Author_Institution

Semicond. Complex Ltd., Punjab, India

Volume

35

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

167

Lastpage

173

Abstract

A simple theory to predict the threshold voltage variation of short-channel MOS transistors with substrate bias is proposed. While the basis of the model is vertical field perturbations due to the source-drain, its uniqueness depends on a definition of threshold voltage based on the amount of total free charge in the channel rather than inversion of the entire channel. The theory has been verified for transistors of three channel lengths, namely 2.70, 1.70, and 0.70 μm, fabricated with a p-well CMOS process. A comparison is made with an earlier model based on field perturbation. The validity of the arguments underlying the theory has been demonstrated by 2-D device simulations with MINIMOS

Keywords

insulated gate field effect transistors; semiconductor device models; 0.7 micron; 1.7 micron; 2.7 micron; 2D simulations; MINIMOS; channel lengths; model; p-well CMOS process; short-channel MOS transistors; short-channel MOSFET; substrate bias; threshold voltage; vertical field perturbations; CMOS process; Circuit simulation; Geometry; MOSFET circuits; Poisson equations; Predictive models; Research and development; SPICE; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2436

Filename

2436