DocumentCode :
969849
Title :
Contrast tuning, image reversal, and automated track developing
Author :
Lamarre, Philip A. ; McTaggart, Rebecca Ann ; Mozzi, Robert L.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Volume :
1
Issue :
3
fYear :
1988
fDate :
8/1/1988 12:00:00 AM
Firstpage :
98
Lastpage :
104
Abstract :
An experiment was conducted to determine if contrast tuning could be performed on an automated track developer using a standard spray versus an ultrasonic nozzle. GaAs wafers were patterned with a linear variable neutral density filter (LVNDF) and developed by spray and an ultrasonic nozzle. The ultrasonic nozzle produced a lower chemical contrast than the standard spray development. This lower chemical contrast used in conjunction with image reversal makes photoresist sidewalls more retrograde, which is advantageous in GaAs processing for metal liftoff. In addition to contrast tuning, the LVNDF technique is described that was used to quickly and easily compare the contrasts of the two development systems. With the LVNDF mask, chemical contrast as well as process uniformity could be quickly measured
Keywords :
III-V semiconductors; gallium arsenide; photolithography; GaAs processing; LVNDF; automated track developer; automated track developing; chemical contrast; contrast tuning; experiment; linear variable neutral density filter; metal liftoff; photoresist sidewalls; process uniformity; retrograde sidewalls; semiconductors; standard spray; ultrasonic nozzle; Automation; Chemical processes; Gallium arsenide; MMICs; Monitoring; Nonlinear filters; Resists; Spraying; Standards development; Throughput;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.4380
Filename :
4380
Link To Document :
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