Title :
InP MESFET with In0.53Ga0.47As/InP heterostructure contacts
Author :
Ishibashi, Takayuki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Source and drain contacts for an InP MESFET were prepared by an Au/Ni/In0.53Ga0.47As/InP layered structure, without a metal alloying process. A highly conductive In0.53Ga0.47As layer grown on an InP active layer reduced the gate-source resistance. A maximum DC transconductance of 16 mS has been obtained for an InP MESFET with 1.2×190 ¿m gate dimensions and a pinch-off voltage of ¿0.7 V.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ohmic contacts; Au/Ni/In0.53Ga0.47As/InP layered structure; DC transconductance; III-V semiconductors; InP MESFET; drain contacts; pinch-off voltage; source contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810153
