• DocumentCode
    969856
  • Title

    InP MESFET with In0.53Ga0.47As/InP heterostructure contacts

  • Author

    Ishibashi, Takayuki

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    215
  • Lastpage
    216
  • Abstract
    Source and drain contacts for an InP MESFET were prepared by an Au/Ni/In0.53Ga0.47As/InP layered structure, without a metal alloying process. A highly conductive In0.53Ga0.47As layer grown on an InP active layer reduced the gate-source resistance. A maximum DC transconductance of 16 mS has been obtained for an InP MESFET with 1.2×190 ¿m gate dimensions and a pinch-off voltage of ¿0.7 V.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ohmic contacts; Au/Ni/In0.53Ga0.47As/InP layered structure; DC transconductance; III-V semiconductors; InP MESFET; drain contacts; pinch-off voltage; source contacts;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810153
  • Filename
    4245618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969856