Title :
Sidegating in a GaAs MBE-grown HFET structure
Author :
Vuong, T. Hong Ha ; Gibson, W.C. ; Ahrens, Richard E. ; Parsey, John M., Jr.
Author_Institution :
AT&T Bell Lab., Reading, PA, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
The sidegating effect in a MBE-grown HFET GaAs structure is considerable and persists to large distances. On the other hand, the leakage current is very low. A model that takes into account the unusual features of sidegating in this structure and is consistent with other studies of similar structures is proposed. On the basis of the model, a change in the isolation process was implemented. This resulted in a large reduction of the sidegating effect and confirmed the main features of the model
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; leakage currents; molecular beam epitaxial growth; semiconductor device models; semiconductor growth; GaAs; MBE-grown HFET GaAs structure; isolation process; leakage current; model; sidegating; Electrodes; Gallium arsenide; HEMTs; Implants; Ion implantation; Leakage current; MODFETs; Molecular beam epitaxial growth; Substrates; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
