DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics

Author

Ando, Yuji ; Itoh, Tomohiro

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

67

Lastpage

78

Abstract

A practical model for DC, small-signal, and noise characteristics in two-dimensional electron gas field-effect transistors is discussed. The model includes accurate charge-control characteristics based on analytical functions relating carrier concentration to Fermi level. This model allows the influence of drain current, frequency, and device parameters on the noise figure (NF) to be studied. The theory explains the experimentally observed trend in NF behaviors

Keywords

carrier density; electron device noise; high electron mobility transistors; semiconductor device models; DC; Fermi level; analytical functions; carrier concentration; charge-control characteristics; device parameters; drain current; frequency; noise figure; noise modeling; small-signal; two-dimensional electron gas field-effect transistors; Capacitance; Circuit noise; Electrons; Epitaxial layers; FETs; Frequency; Noise figure; Noise level; Noise measurement; Noise shaping;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43802

Filename

43802