DocumentCode :
969896
Title :
Tunneling studies on thin film Nb-Al alloys
Author :
Yeh, J.T.C. ; Tsuei, C.C.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Volume :
15
Issue :
1
fYear :
1979
fDate :
1/1/1979 12:00:00 AM
Firstpage :
591
Lastpage :
592
Abstract :
Relatively high quality Josephson tunnel junctions have been fabricated using e-beam coevaporated Nb-Al thin film alloys as the base electrode. Alloys of various Al concentrations, and deposited at several substrate temperatures, have been studied. Structure analysis indicates that these alloys contain metastable disordered bcc and/or amorphous phases. Low excess tunneling currents and a small barrier dielectric constant ( 
) can be achieved by oxidizing an aluminum layer which is deposited on the base electrode as the tunnel barrier.
) can be achieved by oxidizing an aluminum layer which is deposited on the base electrode as the tunnel barrier.Keywords :
Josephson devices; Aluminum alloys; Amorphous materials; Dielectric constant; Dielectric substrates; Dielectric thin films; Electrodes; Metastasis; Temperature; Transistors; Tunneling;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1979.1060171
Filename :
1060171
Link To Document :
