• DocumentCode
    969896
  • Title

    Tunneling studies on thin film Nb-Al alloys

  • Author

    Yeh, J.T.C. ; Tsuei, C.C.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York
  • Volume
    15
  • Issue
    1
  • fYear
    1979
  • fDate
    1/1/1979 12:00:00 AM
  • Firstpage
    591
  • Lastpage
    592
  • Abstract
    Relatively high quality Josephson tunnel junctions have been fabricated using e-beam coevaporated Nb-Al thin film alloys as the base electrode. Alloys of various Al concentrations, and deposited at several substrate temperatures, have been studied. Structure analysis indicates that these alloys contain metastable disordered bcc and/or amorphous phases. Low excess tunneling currents and a small barrier dielectric constant ( \\varepsilon _{r} \\sim 5 ) can be achieved by oxidizing an aluminum layer which is deposited on the base electrode as the tunnel barrier.
  • Keywords
    Josephson devices; Aluminum alloys; Amorphous materials; Dielectric constant; Dielectric substrates; Dielectric thin films; Electrodes; Metastasis; Temperature; Transistors; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1979.1060171
  • Filename
    1060171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969896