• DocumentCode
    969907
  • Title

    Improvement in surface morphology of InGaAsP-InP wafers by dummy layer technique

  • Author

    Kinoshita, J. ; Uematsu, Yutaka

  • Author_Institution
    Toshiba Corporation, Research & Development Center, Kawasaki, Japan
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    In LPE growth of an InGaAsP/InP system, a dummy layer was grown successively on the last layer, followed by material selective etching. This technique contributes to the improvement of the surface morphology of the epitaxial wafers and also to high reproducibility in the device fabrication process.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; InGaAsP-InP wafers; LPE growth; material selective etching; semiconductor junction lasers; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810158
  • Filename
    4245623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969907