Title :
Improvement in surface morphology of InGaAsP-InP wafers by dummy layer technique
Author :
Kinoshita, J. ; Uematsu, Yutaka
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
In LPE growth of an InGaAsP/InP system, a dummy layer was grown successively on the last layer, followed by material selective etching. This technique contributes to the improvement of the surface morphology of the epitaxial wafers and also to high reproducibility in the device fabrication process.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; InGaAsP-InP wafers; LPE growth; material selective etching; semiconductor junction lasers; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810158
