• DocumentCode
    969923
  • Title

    High temperature CW operation of 1.5 ¿m InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers

  • Author

    Noda, Yasuo ; Sakai, Kenji ; Matsushima, Y.

  • Author_Institution
    KDD Research & Development Laboratories, Tokyo, Japan
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    226
  • Lastpage
    227
  • Abstract
    InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers are reported. The CW threshold current at 20°C was 70 mA. The maximum CW operating temperature of 70°C was achieved. The characteristic temperature under CW operation was 51 K. Operation in fundamental transverse mode and single longitudinal mode up to 1.9 and 1.4 times the threshold current, respectively, was obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.5 micron; CW threshold current; III-V semiconductors; InGaAsP/InP; planoconvex waveguide lasers; single longitudinal mode; transverse mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810160
  • Filename
    4245625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969923