• DocumentCode
    969934
  • Title

    Etched profiles of SiO2 Layer

  • Author

    Oh, Se-Ho ; Choi, Yearn-Ik ; Kwon, Young-Se ; Kim, Choong-Ki

  • Author_Institution
    Korea Advanced Insititute of Science & Technology, Department of Electrical Science, Seoul, Korea
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    227
  • Lastpage
    229
  • Abstract
    Etched-edge profile equations of SiO2 in a double layer of fast- and slow-etching SiO2 layer have been derived using Fermat´s principle of least time. Etched profiles obtained from the SEM (scanning electron microscope) micrographs for experimental samples show reasonable agreement with calculated profiles.
  • Keywords
    etching; silicon compounds; Fermat´s principle; SEM) (scanning electron microscope; SiO2 layer; etch edge profile equations; least time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810161
  • Filename
    4245626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969934