Title :
Deep-level transient spectroscopy of AlxGa1-xAs/GaAs using nondestructive acousto-electric voltage measurement
Author :
Tabib-Azar, Massood ; Hajjar, Fares
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
The amplitude and the transient time constant of the acoustoelectric voltage were measured as a function of temperature to determine the activation energy of deep levels in AlxGa1-xAs/GaAs grown by molecular-beam epitaxy. In comparison to other methods based on monitoring the capacitance transient, the DLTS method has several advantages. The technique is nondestructive and highly sensitive, and because of the dependence of the polarity of the acoustoelectric voltage on the carrier type, it yields information about the charge of the transient carriers and the type of deep traps involved in the release or trapping of these carriers
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; molecular beam epitaxial growth; piezoelectric semiconductors; semiconductor epitaxial layers; AlxGa1-xAs-GaAs; DLTS; MBE; acousto-electric voltage measurement; acoustoelectric voltage; activation energy; amplitude; capacitance transient; carrier type; function of temperature; molecular-beam epitaxy; semiconductors; transient carriers; transient time constant; type of deep traps; Gallium arsenide; Molecular beam epitaxial growth; Monitoring; Optical surface waves; Semiconductor diodes; Semiconductor materials; Spectroscopy; Surface acoustic waves; Voltage measurement; Wavelength measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
