Title :
Pressure dependence of hole mobility in In1¿xGaxAsyP1¿y and its relation to alloy scattering
Author :
Hayes, J.R. ; Tatham, H.L. ; Adams, A.R. ; Greene, P.D.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
Pressure-induced changes in the hole mobility of the quaternary alloy In1¿xGaxAsyP1¿y up to 15 kbar indicate that alloy scattering plays an important part in the determination of the low field hole mobility.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; high-pressure effects in solids; indium compounds; III-V semiconductors; In1-xGaxAsyP1-y quaternary alloy; alloy scattering; hole mobility; pressure induced changes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810163
