An analysis of the dynamic behavior of field-limiting ring-passivation system

Author

Johnson, Martin K. ; Annis, Alexander D. ; Sandoe, Jeremy N. ; Coe, David

Author_Institution

Philips Res. Lab., Redhill, UK

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1203

Lastpage

1211

Abstract

The transient operation of field-limiting rings used for the passivation of power switching devices was studied. Results of experiment and fundamental modeling are presented. Since fundamental transient modeling is costly in computer time, an alternative simulation approach was used that involves a combination of off-state, on-state, and circuit modeling and reduces CPU times by two orders of magnitude. Computer simulations are used to illustrate the transient operation in detail and to indicate whether such behavior could ever lead to premature device breakdown

Keywords

insulated gate field effect transistors; power transistors; semiconductor device models; semiconductor technology; CPU times; circuit modeling; computer time; dynamic behavior; experiment; field-limiting ring-passivation system; field-limiting rings; modeling; passivation; power switching devices; premature device breakdown; transient modeling; transient operation; Capacitance measurement; Circuit simulation; Circuit testing; Computational modeling; Computer simulation; Current measurement; Power system modeling; Silicon; Steady-state; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24369

Filename

24369