DocumentCode :
969986
Title :
Effect of cavity length on 1.55 ¿m buried-heterostructure DH laser characteristics
Author :
Tokunaga, M. ; Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Nagai, Hiroto ; Nawata, Koji
Author_Institution :
NTT Yokosuka Electrical Communication Laboratory, Yokosuka, Japan
Volume :
17
Issue :
6
fYear :
1981
Firstpage :
234
Lastpage :
236
Abstract :
Various parameters in 1.55 ¿m buried-heterostructure DH laser design are obtained by simple analytical approximations and the effect of cavity length on laser characteristics. Threshold current density is found to vary strongly (3¿10 kA/cm2) with cavity length when cleaved short enough. Interference in far-field patterns is shown to depend on cavity length.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP DH lasers; analytical approximations; cavity length effect; far-field patterns; interference; threshold current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810166
Filename :
4245631
Link To Document :
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