Title :
MESFETs with nonalloyed ohmic contacts using a graded n+ (InGa)As cap layer
Author :
Eschrich, T.C. ; Carroll, R.D. ; Sacks, R.N. ; Tanski, W.J.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
Results are presented on GaAs MESFET devices with nonalloyed ohmic contacts fabricated using a graded (InGa)As cap layer. Nonalloyed contacts do not require the ohmic alloy step and have much smoother morphology than alloyed metal contacts, permitting more reproducible and accurate gate-level lithography. Specific contact resistances of 1×10-7 Ω-cm2 were measured on FETs that exhibited gm=210 mS/mm and ft =23 GHz at 300 K for devices with 0.6-μm gate lengths
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ohmic contacts; solid-state microwave devices; 0.6 micron; 23 GHz; 300 K; MESFETs; contact resistances; gate-level lithography; graded InGaAs cap layer; metal contacts; morphology; nonalloyed ohmic contacts; semiconductors; Bipolar integrated circuits; Bit rate; Bonding; Circuit simulation; Electron devices; Gallium arsenide; MESFETs; Morphology; Multiplexing; Ohmic contacts;
Journal_Title :
Electron Devices, IEEE Transactions on
