• DocumentCode
    969993
  • Title

    High speed normally-off GaAs MESFET integrated circuit

  • Author

    Katano, F. ; Furutsuka, T. ; Higashisaka, A.

  • Author_Institution
    Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
  • Volume
    17
  • Issue
    6
  • fYear
    1981
  • Firstpage
    236
  • Lastpage
    237
  • Abstract
    Normally-off GaAs MESFET integrated circuits with a maximum toggle frequency of 2.4 GHz were fabricated by conventional photolithography. The unfavourable effect of the surface depletion layer due to the large state density at the GaAs surface has been reduced by adopting the recessed gate FET structure.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; photolithography; GaAs MESFET integrated circuit; III-V semiconductor; photolithography; recessed gate FET structure; state density; surface depletion layer; toggle frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810167
  • Filename
    4245632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969993