• DocumentCode
    969997
  • Title

    A new static memory cell based on the reverse base current effect of bipolar transistors

  • Author

    Sakui, Koji ; Hasegawa, Takehiro ; Fuse, Tsuneaki ; Watanabe, Shigeyoshi ; Ohuchi, Kazunori ; Masuoka, Fujio

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    36
  • Issue
    6
  • fYear
    1989
  • fDate
    6/1/1989 12:00:00 AM
  • Firstpage
    1215
  • Lastpage
    1217
  • Abstract
    A SRAM cell that consists of a bipolar transistor and an MOS transistor is proposed. The cell´s principle of operation is based on the reverse base current (RBC) of a bipolar transistor. It has been fabricated by conventional BiCMOS technology, using double-poly Si. A cell size of 8.58 μm2 is realized in a 1.0-μm ground rule. The mechanism and characteristics of this cell are discussed
  • Keywords
    BIMOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; random-access storage; 1 micron; BiCMOS technology; SRAM cell; VLSI; bipolar transistors; cell area; cell size; characteristics; double polycrystalline Si; mechanism; operation; reverse base current effect; static memory cell; Bipolar transistors; Breakdown voltage; Circuits; Flip-flops; Fuses; Impact ionization; MOSFETs; Random access memory; Ultra large scale integration; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.24372
  • Filename
    24372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969997