Title :
A new static memory cell based on the reverse base current effect of bipolar transistors
Author :
Sakui, Koji ; Hasegawa, Takehiro ; Fuse, Tsuneaki ; Watanabe, Shigeyoshi ; Ohuchi, Kazunori ; Masuoka, Fujio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
A SRAM cell that consists of a bipolar transistor and an MOS transistor is proposed. The cell´s principle of operation is based on the reverse base current (RBC) of a bipolar transistor. It has been fabricated by conventional BiCMOS technology, using double-poly Si. A cell size of 8.58 μm2 is realized in a 1.0-μm ground rule. The mechanism and characteristics of this cell are discussed
Keywords :
BIMOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; random-access storage; 1 micron; BiCMOS technology; SRAM cell; VLSI; bipolar transistors; cell area; cell size; characteristics; double polycrystalline Si; mechanism; operation; reverse base current effect; static memory cell; Bipolar transistors; Breakdown voltage; Circuits; Flip-flops; Fuses; Impact ionization; MOSFETs; Random access memory; Ultra large scale integration; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
