Title :
Photoelastic optical directional couplers in epitaxial GaAs layers
Author :
Benson, T.M. ; Murotani ; Houston, P.A. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Photoelastic channel optical waveguides showing strong lateral confinement at ¿=1.55 ¿m have been fabricated by etching a narrow slot through a Au Schottky contact deposited on an n/n+ GaAs layer. Such structures allow electro-optic directional coupler switches of short coupling length (~2 mm) to be easily realised.
Keywords :
III-V semiconductors; directional couplers; etching; gallium arsenide; integrated optics; optical couplers; semiconductor epitaxial layers; Au Schottky contact; III-V semiconductor; epitaxial GaAs layers; etching; photoelastic optical directional couplers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810168
