Stable solid-phase contact to n-GaAs

Author

Kolawa, E. ; Flick, W. ; Nieh, C.W. ; Molarius, J.M. ; Nicolet, M.A. ; Tandon, J.L. ; Madok, J.H. ; So, F.C.T.

Author_Institution

California Inst. of Technol., Pasadena, CA, USA

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1223

Lastpage

1225

Abstract

An ohmic contact to n-type GaAs of the configuration GaAs/Ni/Ge/W ₆₀N₄₀/Au has been investigated. The contacting layer in this metallization is formed by a solid-state reaction between Ni/Ge and GaAs. Backscattering spectrometry and electrical measurements show that the interposed W-N layer acts as an excellent diffusion barrier both in preventing the intermixing of the top Au layer with Ni/Ge and in confining the reaction between Ni/Ge and GaAs. The contact resistivity is in the range of 10^-6 Ωcm² and remains stable after annealing at 500°C for 60 min

Keywords

III-V semiconductors; gallium arsenide; ohmic contacts; 500 C; 60 min; GaAs-Ni-Ge-WN-Au; W-N diffusion barrier; annealing; backscattering spectrometry; contact resistivity; contacting layer; electrical measurements; metallization; n-type GaAs; ohmic contact; semiconductors; solid-phase contact; solid-state reaction; stable contacts; Annealing; Backscatter; Conductivity; Electric variables measurement; Gallium arsenide; Gold; Metallization; Ohmic contacts; Solid state circuits; Spectroscopy;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24375

Filename

24375