Hydrodynamic carrier transport in semiconductors with multiple band minima

Author

Wilson, Charles L.

Author_Institution

NBS, Gaithersburg, MD, USA

Volume

35

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

180

Lastpage

187

Abstract

Carrier transport equations for analysis of semiconductor devices fabricated in materials with multiple band minima, such as GaAs, are presented. An approach is taken in which the carrier density is conserved and an approximation to the distribution function in terms of quasi-Fermi potentials, carrier temperatures, and other fixed parameters is used that satisfies the particle energy and temperature distributions for each valley in the material. A model of a GaAs MESFET, which illustrates the importance of the physical effects and achieves reasonable agreement with experiment without use of adjustable parameters, is presented as an example

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier density; gallium arsenide; many-valley semiconductors; semiconductor device models; GaAs; III-V semiconductor; MESFET; carrier density; carrier temperatures; device model; distribution function; hydrodynamic carrier transport; multiple band minima; quasi-Fermi potentials; semiconductor devices; semiconductors; Distribution functions; Electrons; Equations; Gallium arsenide; Hydrodynamics; Lattices; Satellites; Semiconductor materials; Temperature distribution; Tensile stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2438

Filename

2438