An analysis of the DC and small-signal AC performance of the tunnel emitter transistor

Author

Chu, Kan M. ; Pulfrey, David L.

Author_Institution

Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

35

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

188

Lastpage

194

Abstract

A model to describe the I-V characteristics of the tunnel emitter transistor (the TETRAN) is developed. It is based on a general model for tunneling in metal thin-insulator semiconductor structures. The model is used to compute typical magnitudes for the parameters appearing in the small-signal hybrid-π equivalent circuit of this device. From these it is predicted that the cutoff frequency for realistic TETRANs based on Al/SiO₂/n-Si structures is about 1 GHz. This is considerably less than the values recently predicted for a related device, the BICFET, which is similar to the TETRAN

Keywords

equivalent circuits; insulated gate field effect transistors; semiconductor device models; tunnelling; Al-SiO₂-Si; DC performance; I-V characteristics; MIS structure; TETRAN; cutoff frequency; model; small-signal AC performance; small-signal hybrid-π equivalent circuit; tunnel emitter transistor; Analytical models; Artificial intelligence; Cutoff frequency; Equivalent circuits; FETs; Insulation; Lead compounds; Performance analysis; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2439

Filename

2439