Title :
Preparation of CuInS2 on GaP grown by LPE
Author :
Hwang, H.L. ; Lin, W.J. ; Chang, Hui Joe ; Sun, C.Y.
Author_Institution :
National Tsing Hua University, Departments of Electrical Engineering & Materials Science, Hsin-chu, Republic of China
Abstract :
The letter describes the use of LPE in the preparation of CuInS2 epitaxial layers. Both the tipping and sliding boat methods were adopted for the LPE growth, the latter being found more suitable.
Keywords :
III-V semiconductors; copper compounds; gallium compounds; indium compounds; liquid phase epitaxial growth; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; sliding boat methods; tipping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810174
