Large-signal characterization of unipolar III-V semiconductor diodes at microwave and millimeter-wave frequencies

Author

Tait, Gregory B. ; Krowne, Clifford M.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

35

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

223

Lastpage

229

Abstract

Large-signal characterizations are performed for n-GaAs and n-InP diodes operating in oscillator circuits at microwave and millimeter-wave frequencies. A CAD approach, consisting of a physical device model and an efficient numerical solution method, is used to analyze several sample diode structures with different material properties and geometries. The large-signal simulation results are reported for X -band and Q-band diodes, and are found to correlate well with results obtained from both laboratory experiment and large-scale ensemble Monte Carlo calculations

Keywords

III-V semiconductors; Monte Carlo methods; electronic engineering computing; gallium arsenide; indium compounds; numerical analysis; semiconductor device models; solid-state microwave devices; CAD; GaAs diodes; InP diodes; Q-band; X-band; ensemble Monte Carlo calculations; large-signal simulation; microwave frequency; millimeter-wave frequencies; numerical solution; oscillator circuits; physical device model; unipolar III-V semiconductor diodes; Frequency; III-V semiconductor materials; Material properties; Microwave circuits; Microwave devices; Microwave oscillators; Millimeter wave circuits; Millimeter wave technology; Semiconductor diodes; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2442

Filename

2442