• DocumentCode
    970117
  • Title

    The effect of Fowler-Nordheim tunneling current stress on mobility in n-channel MOSFETs

  • Author

    Akizawa, Mitsuru ; Matsumoto, Satoru

  • Author_Institution
    Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
  • Volume
    35
  • Issue
    2
  • fYear
    1988
  • fDate
    2/1/1988 12:00:00 AM
  • Firstpage
    245
  • Lastpage
    246
  • Abstract
    The electron effective mobility in n-channel MOSFETs has been investigated under Fowler-Nordheim (F-N) tunneling current stress at room temperature. With F-N current stress, mobilities become smaller than of the prestress mobilities over the whole region of inversion carrier density Ninv, and the Ninv -dependence of the mobility almost disappears
  • Keywords
    carrier mobility; insulated gate field effect transistors; inversion layers; tunnelling; Fowler-Nordheim tunneling current stress; electron effective mobility; inversion carrier density; n-channel MOSFETs; Charge carrier density; Current measurement; Electron mobility; MOS capacitors; MOSFETs; Resistors; Stress; Temperature; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2445
  • Filename
    2445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970117