Title :
Effect of masking geometry on gain of bipolar transistors
Author :
Abbasi, Shuja A. ; Brunnschweiler, A.
Author_Institution :
Aligarh Muslim University, Department of Electrical Engineering, Aligarh, India
Abstract :
The gain of a double diffused bipolar transistor is found to depend upon the masking pattern. Experimental results show a significantly large systematic difference in the gains of transistors of different size and surrounding masking oxide geometry.
Keywords :
bipolar transistors; masks; double-diffused bipolar transistor; gain; masking geometry;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810191
