DocumentCode
970263
Title
Properties of reactively sputtered superconducting films
Author
Gavaler, J.R.
Author_Institution
Westinghouse Electric Corporation, Pittsburgh, Pennsylvania
Volume
15
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
623
Lastpage
624
Abstract
A review of the applicability of reactive sputtering to the synthesis of several A15 and B1 superconductors was performed. Critical temperature, Tc , of Nb3 Ge and V3 Si made by this method were found to be slightly lower than the highest reported values. Tc ´s of V3 Ge and NbC films were higher than found in bulk samples. Nb-Si films were nonsuperconducting. The preparation of pseudo-binary alloys of the Nb-V-Ge, Nb-V-Si and the Nb-Ge-Si systems resulted in no improvements in Tc ´s. Fabrication of layered structures consisting of Nb-C-N and nonsuperconducting layers was investigated.
Keywords
Conducting films; Sputtering; Superconducting materials; Chemical elements; Gases; Germanium; Impurities; Niobium compounds; Sputtering; Substrates; Superconducting films; Superconductivity; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1979.1060200
Filename
1060200
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