• DocumentCode
    970302
  • Title

    Alternative mechanism for substrate minority carrier injection in MOS devices operating in low level avalanche

  • Author

    Childs, P.A. ; Eccleston, W. ; Stuart, R.A.

  • Author_Institution
    University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
  • Volume
    17
  • Issue
    8
  • fYear
    1981
  • Firstpage
    281
  • Lastpage
    282
  • Abstract
    The mechanism proposed by Matsunaga et al. to explain the injection of minority carriers into the substrate of a saturated n-channel MOST cannot account for the size of the observed current. An alternative mechanism is suggested based on optical generation of minorities by radiation emitted by hot carriers in the drain depletion region. Evidence for this mechanism is presented.
  • Keywords
    hot carriers; insulated gate field effect transistors; minority carriers; MOS devices; drain depletion region; hot carriers; low level avalanche; n-channel MOST; substrate minority carrier injection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810197
  • Filename
    4245664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970302