Title :
LPE growth of 1.3 ¿m InGaAsP CW lasers on (110) InP substrates
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
Room temperature CW operation and threshold current densities below 1000 A/cm2 have been achieved near 1.3 ¿m wavelength with InP/InGaAsP/InP DH lasers grown by liquid phase epitaxy on (110)-oriented InP substrates.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; III-V semiconductors; InGaAsP-InP CW lasers; LPE;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810198
