DocumentCode :
970358
Title :
Epitaxial Growth of III-V Compounds for Electroluminescent Light Sources
Author :
Chu, Ting L. ; Smeltzer, R.K.
Author_Institution :
Southern Methodist Univ.
Volume :
9
Issue :
4
fYear :
1973
fDate :
12/1/1973 12:00:00 AM
Firstpage :
208
Lastpage :
215
Abstract :
During the past decade, semiconductor junction electroluminescence has evolved from a laboratory phenomenon to a manufacturing technology. This success can be attributed to the extensive research in the preparation and characterization of III-V compounds. Materials emitting radiation in various regions of the visible spectrum are now available. The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.
Keywords :
Electroluminescent diodes; Epitaxial growth; Crystals; Electroluminescence; Electroluminescent devices; Epitaxial growth; III-V semiconductor materials; Laboratories; Light emitting diodes; Light sources; P-n junctions; Solids;
fLanguage :
English
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0361-1000
Type :
jour
DOI :
10.1109/TPHP.1973.1136738
Filename :
1136738
Link To Document :
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