• DocumentCode
    970358
  • Title

    Epitaxial Growth of III-V Compounds for Electroluminescent Light Sources

  • Author

    Chu, Ting L. ; Smeltzer, R.K.

  • Author_Institution
    Southern Methodist Univ.
  • Volume
    9
  • Issue
    4
  • fYear
    1973
  • fDate
    12/1/1973 12:00:00 AM
  • Firstpage
    208
  • Lastpage
    215
  • Abstract
    During the past decade, semiconductor junction electroluminescence has evolved from a laboratory phenomenon to a manufacturing technology. This success can be attributed to the extensive research in the preparation and characterization of III-V compounds. Materials emitting radiation in various regions of the visible spectrum are now available. The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.
  • Keywords
    Electroluminescent diodes; Epitaxial growth; Crystals; Electroluminescence; Electroluminescent devices; Epitaxial growth; III-V semiconductor materials; Laboratories; Light emitting diodes; Light sources; P-n junctions; Solids;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1973.1136738
  • Filename
    1136738