DocumentCode
970358
Title
Epitaxial Growth of III-V Compounds for Electroluminescent Light Sources
Author
Chu, Ting L. ; Smeltzer, R.K.
Author_Institution
Southern Methodist Univ.
Volume
9
Issue
4
fYear
1973
fDate
12/1/1973 12:00:00 AM
Firstpage
208
Lastpage
215
Abstract
During the past decade, semiconductor junction electroluminescence has evolved from a laboratory phenomenon to a manufacturing technology. This success can be attributed to the extensive research in the preparation and characterization of III-V compounds. Materials emitting radiation in various regions of the visible spectrum are now available. The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.
Keywords
Electroluminescent diodes; Epitaxial growth; Crystals; Electroluminescence; Electroluminescent devices; Epitaxial growth; III-V semiconductor materials; Laboratories; Light emitting diodes; Light sources; P-n junctions; Solids;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1973.1136738
Filename
1136738
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