• DocumentCode
    970386
  • Title

    Planar InP avalanche photodiode with Zn-diffused guard ring

  • Author

    Ando, Hideki ; Susa, N. ; Kanbe, H.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    8
  • fYear
    1981
  • Firstpage
    292
  • Lastpage
    294
  • Abstract
    A guard ring structure with a p+-n¿-n junction formed by Zn diffusion at 450°C gave a high gain planar InP avalanche photodiode. A maximum multiplication factor of more than 50 was obtained uniformly within the photosensitive area without edge breakdown.
  • Keywords
    III-V semiconductors; avalanche photodiodes; indium compounds; III-V semiconductor; Zn-diffused guard ring; multiplication factor; photosensitivity; planar InP avalanche photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810205
  • Filename
    4245672
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970386