DocumentCode
970416
Title
Ambient Effect On Ionic Charges in Dielectric Films
Author
Swaroop, B.
Author_Institution
Kelsey-Hayes Research and Dev. Center
Volume
9
Issue
4
fYear
1973
fDate
12/1/1973 12:00:00 AM
Firstpage
234
Lastpage
236
Abstract
The effect of various annealing ambients on the ionic charges contained in the dielectric structures of silicon dioxide-silicon and silicon nitride-silicon dioxide-silicon was investigated. It has been observed that most effective ambients in making ionic species immobile are nitrogen and a mixture of nitrogen and hydrogen chloride gases. Further, silicon nitride used as passivating dielectric films over semiconductor devices has been observed to be an effective barrier for ionic impurities.
Keywords
IGFETs; MIS devices; Silicon dioxide films; Silicon nitride films; p-i-n diodes; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Circuits; Current measurement; Dielectric films; Electrodes; Nitrogen; Silicon compounds; Voltage;
fLanguage
English
Journal_Title
Parts, Hybrids, and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0361-1000
Type
jour
DOI
10.1109/TPHP.1973.1136741
Filename
1136741
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