• DocumentCode
    970441
  • Title

    High reflectivity and low resistance 1.55 mu m Al0.65In0.35As/Ga0.63In0.37As strained quarter wave Bragg reflector stack

  • Author

    Guy, P. ; Woodbridge, Karl ; Mopkinson, M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1947
  • Lastpage
    1948
  • Abstract
    Reflector stacks grown for use in devices operating at 1.55 mu m on InP substrates normally use lattice matched quaternary alloys and a large number of periods to obtain a high reflectivity. In this work therefore we have investigated the use of Al0.65In0.35As/Ga0.63In0.37As ternary layers, which are approximately 1% strained with respect to the substrate. Results show that over 80% reflectivity and a low resistance can be obtained with only a 12 period structure.
  • Keywords
    III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; indium compounds; integrated optics; mirrors; optical modulation; reflectivity; refractive index; 1.55 micron; Al 0.65In 0.35As-Ga 0.63In 0.37As; Al 0.65In 0.35As/Ga 0.63In 0.37As ternary layers; InP; InP substrates; high reflectivity; low resistance; reflectivity; strained quarter wave Bragg reflector stack;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931296
  • Filename
    244601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970441