Title :
Intermodulation nulling in GaAs MESFETs
Author :
Parker, Anthony E. ; Scott, J.B.
Author_Institution :
Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
The output conductance of gallium arsenide MESFETs, traditionally considered detrimental to device performance, is exploited to effect the cancellation of distortion. This occurs in a common-source amplifier with correct loading and provides useful gain. A technique for characterising the device is presented to allow calculation of optimum load for minimum distortion.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric distortion; gallium arsenide; intermodulation; semiconductor device models; solid-state microwave devices; GaAs; GaAs MESFETs; common-source amplifier; distortion cancellation; intermodulation nulling; microwave amplifier devices; optimum load; output conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931305
