Title :
Performance of an improved InGaAsP ridge waveguide laser at 1.3 ¿m
Author :
Kaminow, I.P. ; Nahory, R.E. ; Stulz, L.W. ; DeWinter, J.C.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Single-mode, CW ridge lasers at 1.3 ¿m have been made with threshold currents as low as 125 mA at 25°C using a symmetrical wafer structure. Performance is interpreted in terms of ridge guiding and injected carrier antiguiding.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.3 microns; InGaAsP; injected carrier antiguiding; ridge guiding; ridge waveguide laser; semiconductor junction laser; symmetrical wafer structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810225
