• DocumentCode
    970636
  • Title

    Quantum phase noise and linewidth of a semiconductor laser

  • Author

    Yamamoto, Yusaku ; Mukai, Toshiharu ; Saito, Sakuyoshi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    9
  • fYear
    1981
  • Firstpage
    327
  • Lastpage
    329
  • Abstract
    Quantum phase noise of a single longitudinal mode AlGaAs semiconductor laser is measured by converting it into intensity noise. A Michelson interferometer is used and a time delay is introduced. Results on spectral linewidth and noise spectrum are in good agreement with theoretical analyses based on a rate equation. Spectral linewidth of the semiconductor laser decreases from 100 MHz to 4 MHz in proportion to (I/Ith¿1)¿1 at the bias level of I/Ith=1.05 ¿ 1.4.
  • Keywords
    III-V semiconductors; aluminium compounds; electric noise measurement; gallium arsenide; light interferometers; semiconductor junction lasers; spectral line breadth; AlGaAs; Michelson interferometer; noise spectrum; semiconductor junction laser; single longitudinal mode; spectral linewidth; time delay;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810230
  • Filename
    4245698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970636