Optical Static RAM Cell

Author

Pleros, Nikos ; Apostolopoulos, Dimitrios ; Petrantonakis, Dimitrios ; Stamatiadis, Christos ; Avramopoulos, Hercules

Author_Institution

Dept. of Inf., Aristotle Univ. of Thessaloniki, Thessaloniki

Volume

21

Issue

2

fYear

2009

Firstpage

73

Lastpage

75

Abstract

We demonstrate an optical static random access memory cell that provides read and write functionality at 5 Gb/s. The circuit comprises a hybridly integrated semiconductor optical amplifier-Mach-Zehnder interferometer (SOA-MZI) flip-flop serving as the memory unit and two additional SOA-based cross-gain modulation switches for controlling access to the memory cell.

Keywords

Mach-Zehnder interferometers; flip-flops; integrated optics; optical modulation; optical storage; optical switches; random-access storage; semiconductor optical amplifiers; Mach-Zehnder interferometer; SOA-based switches; bit rate 50 Gbit/s; cross-gain modulation switches; integrated semiconductor optical amplifier; optical flip-flop; optical static RAM cell; random access memory; Integrated Mach-Zehnder inteferometer; optical flip-flop; optical memory; optical random access memory (RAM); optical signal processing; semiconductor optical amplifier (SOA);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2008444

Filename

4663493