Controlling Third-Order Nonlinearities by Ion-Implantation Quantum-Well Intermixing

Author

Wagner, Sean J. ; Holmes, Barry M. ; Younis, Usman ; Helmy, Amr S. ; Hutchings, David C. ; Aitchison, J.Stewart

Author_Institution

Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON

Volume

21

Issue

2

fYear

2009

Firstpage

85

Lastpage

87

Abstract

The optical Kerr effect was measured by observing self-phase modulation in GaAs-AlGaAs superlattice-core waveguides modified by ion-implantation quantum-well intermixing. The band-gap energy was shifted by 68 nm for an implantation dose of 0.5times10¹³ cm^-2 and annealing temperature of 775degC. The Kerr effect was suppressed by up to 71% in the transverse-electric polarization after intermixing. A reduced polarization dependence of the self-phase modulation was observed after intermixing.

Keywords

III-V semiconductors; aluminium compounds; annealing; energy gap; gallium arsenide; integrated optics; ion implantation; optical Kerr effect; optical control; optical materials; optical waveguides; quantum wells; self-phase modulation; semiconductor quantum wells; semiconductor superlattices; GaAs-AlGaAs; annealing temperature; band-gap energy; ion-implantation dose; monolithic integration; optical Kerr effect; quantum-well intermixing; reduced polarization dependency; self-phase modulation; superlattice-core waveguides; third-order nonlinear control; transverse-electric polarization; Nonlinear optics; optical Kerr effect; quantum-well intermixing (QWI); semiconductor superlattice;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2008629

Filename

4663495