Title :
High-power high-gain monolithically integrated preamplifier/power amplifier
Author :
Yeh, Pinghui S. ; Jiang, Siwei ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
The monolithic integration of an index-guided single lateral mode optical preamplifier with a power tapered semiconductor laser amplifier is reported. With a coupled input power of only 6 mW, 4.5 W of output power is obtained at 810 nm. The far-field pattern is dominated by a diffraction-limited single lobe. An internal small signal gain of 35 dB is demonstrated.
Keywords :
integrated optoelectronics; refractive index; semiconductor lasers; 35 dB; 4.5 mW; 6 mW; 810 nm; coupled input power; diffraction-limited single lobe; far-field pattern; high-gain; high-power; index-guided; internal small signal gain; monolithically integrated preamplifier/power amplifier; output power; power tapered semiconductor laser amplifier; single lateral mode optical preamplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931319
