Title :
Diffusion and oxide viscous flow mechanism in SDB process and silicon wafer rapid thermal bonding
Author :
Tong, Q.-Y. ; Shen, Haiying
Author_Institution :
Microelectron Centre, Southeast Univ., Nanjing, China
fDate :
5/24/1990 12:00:00 AM
Abstract :
A relationship between bonding strength and bonding area has been found which suggests that the increase in bonding strength is caused by the bonding area increase in the oxidised silicon wafer direct bonding (SDB) process. The bonding area shows a saturation property with bonding time. Diffusion of various species existing in bonding interface region plays a key role in SDB process over different temperature. Viscous flow of the oxides completes bonding at T>1050 degrees C. A rapid thermal bonding (RTB) at 1200 degrees C for 2 min following 800 degrees C for 2 hr annealing realises complete bonding with little doping profile change in the system.
Keywords :
elemental semiconductors; integrated circuit technology; semiconductor technology; silicon; 2 hr; 2 min; 800 to 1200 C; SDB process; Si wafer direct bonding; Si-SiO 2-Si; SiO 2 flow; annealing; bonding area; bonding strength; bonding temperature; bonding time; complete bonding; diffusion; oxide viscous flow mechanism; rapid thermal bonding; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900455
