Title :
Strain-balanced InGaAs/GaAsP multiquantum well reflection modulator operating near 1.06 mu m on GaAs and silicon substrates
Author :
Goossen, K.W. ; Cunningham, John E. ; Santos, M.B. ; Jan, W.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
An InGaAs/GaAsP multiquantum well (MQW) reflection modulator is demonstrated that has no material buffer layer between the mirror and MQW, for superior electronic integration compatibility. A reflectivity change from 32 to 69% is obtained on GaAs substrates for a 0-10 V swing at 1.06 mu m. We further demonstrate such a device on a silicon substrate.
Keywords :
SEEDs; gallium arsenide; gallium compounds; indium compounds; optical modulation; reflectivity; 0 to 10 V; 1.06 mum; GaAs; GaAs substrates; InGaAs-GaAsP; InGaAs/GaAsP multiquantum well reflection modulator; MQW reflection modulator; SEED modulator; Si substrates; buffer layer; electronic integration compatibility; mirror; multiquantum well; reflectivity change; self electro-optical effect devices; strain-balanced;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931321
