3dB coupler-balanced pin pair JFET circuit integrated on InP for coherent detection

Author

Bruno, Alessandro ; Giraudet, L. ; Legros, E. ; Ghirardi, F. ; Menigaux, L. ; Scavennec, A. ; Carenco, A.

Author_Institution

CNET, Bagneux, France

Volume

29

Issue

22

fYear

1993

Firstpage

1986

Lastpage

1987

Abstract

A 3 dB directional coupler and a balanced pin diode pair have been monolithically integrated in the InGaAs/InGaAsP/InP material system, together with the preamplifier front-end: a JFET and a load resistor. All the layers were grown in a single MOCVD epitaxy run. At 1.55 mu m, this integrated receiver coupled to a hybrid GaAs amplifier exhibits a 3 dB bandwidth of 2 GHz with a very low average input noise of 9 pA/ square root Hz in the 130 MHz-2 GHz range, and a common mode rejection ratio below -20 dB.

Keywords

directional couplers; field effect integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical couplers; optical receivers; p-i-n photodiodes; 1.55 mum; 2 GHz; 3 dB; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP material system; InP; balanced pin diode pair; coherent detection; common mode rejection ratio; coupler-balanced pin pair JFET circuit; directional coupler; hybrid GaAs amplifier; integrated receiver; load resistor; monolithically integrated; preamplifier front-end; single MOCVD epitaxy run; very low average input noise;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931322

Filename

244627